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Refractory Metals - Composites -Special Alloys - Ceramics -Tungsten - Titanium
Compound Semiconductor Crystals
Cadmium Telluride - CdTe CdTe and mixed crystals up to 3" diameter for growing epitaxial layers of MCT for IR detectors, special windows, and solar cells. Grown using Bridgeman with Cd-reservoir. Gallium Antimonide - GaSb GaSb is available in both P and N types for semiconductor industries. Standard wafers are 1.5, 2.0 and 3.0" diameter and oriented [100], [111] and [311] and off angles. GaSb single crystal wafers are grown by the LEC CZ or horizontal zone melting method and prepared for epitaxial deposition. Gallium Arsenide - GaAs GaAs is available up to 3" diameter and can be specially doped for use in microwaves, laser and photoelectric devices. Special single crystal substrates are available for depositing III-V compounds for blue lasers and LEDs. Click here for III-V substrate properties Click here for semiconductor properties Gallium Phosphide Germanium - Ge Diameters up to 300 mm and transmission range from 1.8 um to 17 um. Grown using CZ method Indium Phosphide - InP Doped and undoped material available in both P and N types up to 3" diameter.High quality InP single crystal wafers, N and P types, are grown by LEC and precision wafered before epitaxial polishing. Wafers are available doped and undoped in standard sizes of 1.5, 2.0 and 3.0". Semi insulating InP is doped with Fe and are grown by LEC for advanced microwave devices. Click here for III-V substrate properties Click here for semiconductor properties Silicon - Si
Silicon Carbide - SiC
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