|
Refractory Metals - Composites -Special Alloys -
Ceramics -Tungsten - Titanium
Aluminum Nitride Products
The Aluminium Nitride product is a new material
having such characteristics as superior thermal conductivity,
high electric insulation, and coefficient of thermal expansion
similar to that of silicon (Si) and is drawing attention as a
next-generation material with high thermal conductivity
- High thermal conductivity about 7 times that
of Alumina
-
Having coefficient of thermal expansion similar to that of
silicon, it realizes a high
-
reliability against installation of a large Si chip and heat
cycle
-
High electric insulation, and low dielectric constant
-
Mechanical strength higher than that of Alumina
-
Superior corrosion resistance against molten metal
- Very small content of impurities, no toxicity, high purity.
Physical properties (principal values)
| Characteristic value |
Unit |
Sheet formed product |
Press molded product |
|
|
Density |
g/cm3 |
33 |
3.3 |
|
|
Thermal conductivty |
W/m•k (R.T.) |
170 |
160 |
|
|
Coefficient of thermal expansion |
x10-6/ºC (R.T.~400ºC) |
4.6 |
4.6 |
|
|
Dielectric strength |
KV/mm (R.T.) |
15 |
15 |
|
|
Volume resistivity |
Ω•cm (R. T.) |
1014 |
1014 |
|
|
Dielectric constant |
1MHz (R.T.) |
9.0 |
9.0 |
|
|
Bending strength |
MPa (R.T.) |
450 |
300 |
| Board, general tolerance |
Thermal Conductivity |
| |
|
|
|
|
|
| Item |
Sheet formed product |
Press molded product |
|
|
Dimension |
Max. 5"x7" |
Max. 2"x2" |
|
Thickness |
0.5~1.5
(as fired)
0.3~1.0
(lapped) |
1~8 mm |
|
Dimensional tolerance |
±1%NLT
±0.1 mm |
±1%NLT
±0.1 mm |
|
Thickness tolerance * |
±10% |
±10% |
Coefficient of thermal expansion |
|
Warp tolerance ** |
≤0.003mm/mm |
≤0.003mm/mm |
|
|
*Thickness tolerance of both-side polished product :
±0.05 mm
** Warp of both-sided polished product: ±0.0015
mm/mm |
| |
|
|
| |
|
|
| |
|
|
| |
|
|
|
|
|
| Physical properties (principal values) |
| Characteristic value |
Unit |
Sheet formed product |
Press molded product |
|
|
|
Density |
g/cm3 |
3.3 |
3.3 |
|
|
|
Thermal conductivity |
W/m•k (R.T.) |
170 |
160 |
|
|
|
Coefficient of thermal expansion |
x10-6/ºC (R.T.~400ºC) |
4.6 |
4.6 |
|
|
|
Dielectric strength |
KV/mm (R.T.) |
15 |
15 |
|
|
|
Volume resistivity |
Ω•cm (R. T.) |
1014 |
1014 |
|
|
Application
- Power transistor module
board
- High-frequency device
boar
- Radiating/insulating plate
for thyristor
- Mount board for
semiconductor laser and light emission diode
- Hybrid module, ignition
module
- IC package
- Thermo-module board
- Parts of semiconductor
manufacturing equipment
Power Module
| 
