|
Refractory Metals - Composites -Special Alloys -
Ceramics -Tungsten - Titanium
Compound Semiconductor Crystals
Cadmium Telluride - CdTe
CdTe and mixed crystals up to 3" diameter for growing epitaxial
layers of MCT for IR detectors, special windows, and solar
cells. Grown using Bridgeman with Cd-reservoir.
Gallium Antimonide - GaSb
GaSb is available in both P and N types for semiconductor
industries. Standard wafers are 1.5, 2.0 and 3.0" diameter and
oriented [100], [111] and [311] and off angles. GaSb single
crystal wafers are grown by the LEC CZ or horizontal zone
melting method and prepared for epitaxial deposition.
Gallium Arsenide - GaAs
GaAs is available up to 3" diameter and can be specially doped
for use in microwaves, laser and photoelectric devices. Special
single crystal substrates are available for depositing III-V
compounds for blue lasers and LEDs.
Click here for III-V substrate properties
Click here for semiconductor properties
Gallium Phosphide
Germanium - Ge
Diameters up to 300 mm and transmission range from 1.8 um to 17
um. Grown using CZ method
Indium Phosphide - InP
Doped and undoped material available in both P and N types up to
3" diameter.High quality InP single crystal wafers, N and P
types, are grown by LEC and precision wafered before epitaxial
polishing. Wafers are available doped and undoped in standard
sizes of 1.5, 2.0 and 3.0". Semi insulating InP is doped with Fe
and are grown by LEC for advanced microwave devices.
Click here for III-V substrate properties
Click here for semiconductor properties
Silicon - Si
Growth Method: Czochralski and float zone. Cz ingots and wafers
are available up to 150 mm diameter and FZ material up to 76 mm.
Both grades are available with a range of dopants and electrical
properties. Call or Fax for details of materials. Smooth,
regular cross section with slight variation in diameters.
Click here for semiconductor properties
Silicon Carbide - SiC
Single crystal substrates are available with very low
dislocation density. Standard stock sizes are 10 x 10 x 0.3 mm
and 7 x 7 x.3mm.
Click here for III-V substrate properties
| 
