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Refractory Metals - Composites -Special Alloys -
Ceramics -Tungsten - Titanium
Nonlinear Crystals
Barium Fluoride - BaF2
Barium Fluoride is grown by vacuum Stockbarger technique in
diameters up to 240 mm. The material is susceptible to thermal
shock. It is transparent in the wide spectrum band. Available in
both optical and scintillator grades. The scintillator grade
material has typical absorbance of 0.2 at 190 nm (transmissivity
of 0.013mm-1) through a 60 mm path length, and 0.08 at 300 nm (transmissivity
of 0.015mm-1) Applications include windows, lenses of special
types of objectives, mirror substrate in optical systems
operating in UV and IR spectrum band. Diameters up to 240 mm for
transmission to 12.5 um.
Cadmium Selenide - CdSe
Seeded vapor phase crystals are grown without contact with
reactor walls, up to 2" diameter. Substrates for AII-BVI epitaxy,
epitaxy, polarizations and windows for special IR range.
Click here for III-V substrate properties.
Cadmium Sulfide - CdS
Seeded vapor phase crystals are grown without contact with
reactor walls, up to 2" diameter. Substrates for AII-BVI epitaxy,
polarizers and windows for special IR range.
Cadmium Telluride - CdTe
CdTe and mixed crystals up to 3" diameter for growing epitaxial
layers of MCT for IR detectors, special windows, and solar
cells. Grown using Bridgeman with Cd-reservoir.
CdZnTe
CdTeSe Calcium Fluoride - CaF2
Calcium Fluoride is grown by vacuum Stockbarger technique in
diameters up to 350 mm. Widely used in IR applications such as
spectroscopic accessories, prisms and lenses. CaF has a cubic
structure with a lattice constant of 5.462 A and a cleavage
plane of [111]. The transmission range is 0.13 to 10 microns.
Three grades available UV, visible, and infrared transmission.
Sizes from 150 to 350 mm diameter.
Indium Phosphide - InP
Doped and undoped material available in both P and N types up to
3" diameter.High quality InP single crystal wafers, N and P
types, are grown by LEC and precision wafered before epitaxial
polishing. Wafers are available doped and undoped in standard
sizes of 1.5, 2.0 and 3.0". Semi insulating InP is doped with Fe
and are grown by LEC for advanced microwave devices.
Click here for III-V substrate properties
Click here for semiconductor properties
Lithium Fluoride - LiF
Three grades available UV, visible, and infrared transmission.
Sizes from 150 to 250 mm diameter.
Magnesium Fluoride - MgF2
For UV and IR transmission from 0.13 um to 7.0 um and diameters
up to 120 mm. Mercury Cadmium Telluride - HgCdTe (MCT)
Bulk HgCdTe material for IR detectors. Data -High quality P and
N type epitaxial grown HgCdTe on CdTe or CdZnTe substrates.
Available wavelengths of 3 to 20 um and section up to 30 x 30
mm.
Silver Gallium Selenide - AgGaSe2
AgGaSe2 is an efficient frequency doubling crystal for infrared
radiation. It has low optical absorption, low scattering and low
wavefront distortion. AgGaSe2 has the highest figure of merit
for nonlinear interactions in the near and deep infrared.
Applications for both crystals include differential absorption
LIDAR, surgical procedures, and IR wave plates.
Silver Gallium Sulfide
Sodium Chloride - NaCl
Available up to 120 mm diameter polished for windows and lens. Zinc Selenide - ZnSe (CVD)
Zinc Selenide is chemically inert, non-hygroscopic, highly pure,
theoretically dense and easily machined. It has extremely low
bulk losses due to absorption and scatter, has a high resistance
to thermal shock and is stable in virtually all environments. It
is available in circular blanks and sheet material are available
in stock to meet your most urgent delivery requirements. Custom
diameters, rectangles, CNC-profiled blanks, generated lens
blanks, prisms, and near-net shape domes can also be made to
your specifications.
Click here for zinc selenide properties
Zinc Sulfide - ZnS
Seeded vapor phase crystals are grown without contact with
reactor walls, up to 40 mm diameter. Substrates for
AII-BVIepitaxy and windows for special IR range.
Zinc Telluride - ZnTe
Seeded vapor phase crystals are grown without contact with
reactor walls, up to 40 mm diameter. Substrates for
AII-BVIepitaxy and windows for special IR range.
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