Electrochemical Products - Semiconductor Wafers

4750 Magnolia Street
Port Townsend, WA 98368
Tel: 360-379-6707
Toll Free: 877-452-4910
Fax: 360-379-6907
[email protected]

Semiconductor Wafers

Marketech offers a range of semiconductor wafers using the CZ and float zone growth techniques. The crystal boules are pulled or grown using the most up-to-date equipment and under carefully controlled conditions that match industry standards for quality.

Elemental Silicon Material

Standard silicon single crystals are grown with diameters from 51 to 150 mm from poylcrystal material with donor concentrations corresponding to a resitivity of 300 ohm cm. Standard "p type" silicon boules are doped with boron and "n type" are doped with antimony or arsenic with oxygen content controlled to 6 - 9 atoms/cm3.

Techical Data
Growth Method	Czocharlski-LED				Float Zone
Diameters	51, 76, 100, 150 mm				33, 38, 51, 63.5, 76.5
Std. Orientation	<111>, <100>				<111>, <100>
Type	p-type	n-type			p-type	n-type
Doping	Boron	Phos	Sb	As	Boron	Phos	NDT
Resistivity Range Ohm-cm	0.05 - 50.0	0.10 - 25.0	.008 - 0.02	<.007	20 - 300	6 - 200	5 - 200

Note: The above parameters are standard production. Upon request, we can adjust for other requirements such as diameter, resistivity ranges, RRV, oxygen content, etc.

Elemental Germanium

Marketech offers elemental single crystal germanium crystals up to 3" diameter grown using advanced CZ techniques. We offer a range of diameters and thickness with epi ready surfaces or standard optical polishes. Mixed Si_sGe_1-x crystals are also available. Contact our office for details.

Compound III-V Materials

These materials are epi ready and are also available as polycrystal wafers and as seed crystals. Check with Marketech for availability and pricing.

Material:	GaAs
Growth Method	LEC				HB-GF
Type	n	p	Semi-insulating		n
Dopant	Te	Zn	Cr	none	Si
Orientation	<100> � 20' or 2 - 3° of <100> toward <110>
Diameter - mm	40 - 51 - 76 - 100
Thickness - �m	375 - 400 - 500
EDP cm^-2	5 - 8 *10⁴
CC ^-3	510¹⁷ - 5 10¹⁹
Mobility cm²/Vs	>2000	>90	>3000	>4000	>1500
Resistivity			1 x 10⁷	1 x 10⁷

Material: InP GaP

Growth Method Czochralski - LEC

Type n p Semi-Insul n

Dopant S, Sn Zn Fe S, Te

Orientation <100> � 20' or 2 - 3° of <100> toward <110>

Diameter - mm 40 - 51

Thickness - �m 375 - 400

EDP cm^-2 5 x 10¹⁷ 3.5 x 10¹⁷

CC ^-3 5x10^-17 >1000 3.5 x 10¹⁷ - 2 x 10¹⁷

Mobility cm²/Vs >1600 >40

Resistivity 1 x 10⁷

Material: InAs GaSb InSb

Growth Method CZ - LEC CZ CZ

Dopant un-doped

Size 2"

Wafers with Epi Layers

Marktech offers both MOCVD and CVD deposition on GaAs and InP wafers using state of the art deposition and testing equipment. Contact us for details.

MOCVD Layers:	GaAs, AlGaAs, InP, InGaAs, InGaAsP, InGaP, InGaAlP
CVD Layers:	GaAs, GaAsP, InP

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