Non-Metallic Crystals: Descriptions

The following are descriptions of non metallic single and poly crystal materials offered by Marketech International. They are listed alphabetically by chemical formula or common acronym. For metal single crystals click here.

ADP NH4H2PO4

ADP combines a wide range of transmission wave lengths and a high nonlinear optical coefficient as well as a high optical damage threshold. ADP crystal is a commonly used material to make 4th harmonic wave generators for 1.6 micron lasing and frequency multiplier for dye lasers. It has good piezoelectric and electro optical properties. Available sizes from 20 x 20 x 20 to 70 x 70 x 70 mm.

 

Alexandrite - Cr:BeAl2O4

Tunable solid-state laser material. Features a broad wavelength tuning range of 710-800 nm with the capability to store and efficiently extract multijoule pulses of energy. (31)

Aluminum Oxide (See sapphire)

Ammonium Biphthalate - NH4AP

Alkaline Metals Biphthalate single crystals are used in x-ray spectral analysis as analyzing crystals in a long wave spectral area. Analyzing crystals serve to separate the X-radiation into spectrum. The usage of these crystals enables a qualitative and quantitative analysis of light elements (Fe, Al, Mg, F, Si), due to their lattice (up to 2.6 nm). The plasticity and high fissionability of these crystals facilitates the production of fine plates (0.2 - 0.5 mm) for focusing analyzers. Biphthalate crystals are stable in a vacuum. (MT)

Barium Fluoride - BaF2

Barium Fluoride is grown by vacuum Stockbarger technique in diameters up to 240 mm. The material is susceptible to thermal shock. It is transparent in the wide spectrum band. Available in both optical and scintillator grades. The scintillator grade material has typical absorbance of 0.2 at 190 nm (transmissivity of 0.013mm-1) through a 60 mm path length, and 0.08 at 300 nm (transmissivity of 0.015mm-1) Applications include windows, lenses of special types of objectives, mirror substrate in optical systems operating in UV and IR spectrum band. Diameters up to 240 mm for transmission to 12.5 um.

Barium Nitrate - Ba(NO3)2

Material for SRS converters that provides non-linear conversion of frequency radiation in lasers due to stimulated Raman Scattering Effect (SRS). Possible applications include: frequency converter in tunable lasers for expansion tuning range, production of additional emission band combined with elements of doubling and summation of frequency, and optical filter for wave band 1.8 - 2.4 um.(MT)

Barium Titanate (BTO) - BaTiO3

BaTiO3 is a crystal used for its photorefractive properties and large electro-optic coefficients. For optical information processing and computing applications, the high beam coupling gain and self pumped phase conjugate reflectivity are advantageous. BaTiO3is also known for low absorption loss in visible and near infrared range, high resolution and fidelity of phase conjugate.

Barium Titanate - Ce Doped - Ce:BaTiO3

Ce:BaTiO3is a new photorefractive crystal with superior properties when compared with other materials. In this crystal, the formation of a Self Pumped Phase Conjugate (SPPC) wave is based on the backward stimulated photorefractive scattering in air. Thus the reflectivity of the SPPC wave is highly insensitive to the incident beam's angle, inclination, and pitch relative to the crystal. As a SPPC mirror, the photorefractive performance of O¡ cut is better than the 45¡ cut of BaTiO3. Standard sizes: 5 x 5 x 5 mm and 5 x 5 x 2 mm.

Beta Barium Borate - BBO

BBO is a new type of non-linear optical crystal which exhibits a wide transparency range (190-350 nm), high nonlinear coefficient (6 x deff KDP at 1064-532 nm), and high damage threshold. BBO is useful with Ti:Sapphire, Nd:YAG and other Q-Switched lasers.

BGO - Bi4Ge3O12

BGO is a novel scintillation crystal, widely used as a scintillator for x-ray computerized tomography (XCT), positron CT (PCT), electromagnetic shower calorimeter and oil well logging. BGO features high stopping power and high photo peak efficiency, is non-hygroscopic, has low after glow, and is easy to machine to any size required. Boules up to 76 mm dia. 150 mm long. Also available BiGeO20piezoelectric crystal.

Bismuth Telluride - BiTe - THERMAL ELECTRIC MATERIAL

Thermal electric materials based on BiTe are available in both N and P types for use in thermoelectric coolers. This material can be adjusted to meet particular specifications. Typical Seebeck coefficients are 200 - 260, electrical conductivity of 500 - 1000/Ohm-cm and a guaranteed Z factor of .0029/K-1. For increased strength, BiTe is also available as polycrystalline material. Wafers can be cut to individual element size and coated with solder ready nickel diffusion layer, which also adds strength to fragile wafers.

BSO - Bi12SiO20

BSO has properties of piezoelectric, photoconductive, electro-optic crystals. Applications include image amplifiers, matrix inversion, beam combining, to mention a few. BSO is available for modulator applications, 50 mm diameter and 100 mm long.

Cadmium Selenide - CdSe

Seeded vapor phase crystals are grown without contact with reactor walls, up to 2" diameter. Substrates for AII-BVI epitaxy, epitaxy, polarizations and windows for special IR range.
Click here for III-V substrate properties.

Cadmium Sulfide - CdS

Seeded vapor phase crystals are grown without contact with reactor walls, up to 2" diameter. Substrates for AII-BVI epitaxy, polarizers and windows for special IR range.

Cadmium Sulfur Selenide - CdS(x)Se(1-x)

II-VI mixed crystal. Hexagonal crystal structure.
Max. size:
(0001) (C-plane) 0 60
(1-102) (R-plane) 40x20
(10-10) (M-plane) 40x20
(11-20) (R-plane) 40x20
other on request. (C)

Cadmium Telluride - CdTe

CdTe and mixed crystals up to 3" diameter for growing epitaxial layers of MCT for IR detectors, special windows, and solar cells. Grown using Bridgeman with Cd-reservoir.

Cadmium Telluride Selenide - CdTe(x)Se(1-x)

II-VI mixed crystal. Cubic crystal structure.
Max. size:
(111) 0 40
(110) 20x30
(100) 20x30
(11-20) (R-plane) 40x20
other on request. (C)

Cadmium Tungstate - CdWO4

Cleavage Planes: (010)
Decay Constant: 20.0µs
Density: 7.90g.cm-3
Emission Spectral Range: 330 to 540nm
Melting Point: 1320°C
Peak Scintillation Wavelength: 520nm
Photons/MeV: 13,000
Radiation Length: 1.00cm
Refractive Index at peak emmission: 2.25
Stability: Stable
Structure: Monoclinic
Temperature Coefficient of Light Output: -0.10%.K-1
(H)

Cadmium Zinc Telluride - Cd(1-x)Zn(x)Te

CdZnTe and mixed crystals up to 3" diameter for growing epitaxial layers of MCT for IR detectors, special windows, and solar cells. II-VI mixed crystal. Cubic crystal structure.
Max. size:
(111) 0 40
(110) 20x30
(100) 20x30
(11-20) (R-plane) 40x20
other on request. (C)

Calcite - (Calcium Carbonate) - CaCO2 (pdf 7k)

Calcium Fluoride - CaF2

Calcium Fluoride is grown by vacuum Stockbarger technique in diameters up to 350 mm. Widely used in IR applications such as spectroscopic accessories, prisms and lenses. CaF has a cubic structure with a lattice constant of 5.462 A and a cleavage plane of [111]. The transmission range is 0.13 to 10 microns. Three grades available UV, visible, and infrared transmission. Sizes from 150 to 350 mm diameter.

Calcium Neodymium Aluminate - CaNdAlO3

CaNdAlO3 is a newly available crystal for superconductor and other applications that has a cubic structure and a lattice constant of 5.653 A and thermal expansion of 6.0 x -10. It is a stable pervoskite structure without twinning, has low dielectric constant suitable for microwave or high frequency applications. Call for available sizes.
Click here for superconductor substrate properties.

Cesium Biphthalate - CsAP

Alkaline Metals Biphthalate single crystals are used in x-ray spectral analysis as analyzing crystals in a long wave spectral area. Analyzing crystals serve to separate the X-radiation into spectrum. The usage of these crystals enables a qualitative and quantitative analysis of light elements (Fe, Al, Mg, F, Si), due to their lattice (up to 2.6 nm). The plasticity and high fissionability of these crystals facilitates the production of fine plates (0.2 - 0.5 mm) for focusing analyzers. Biphthalate crystals are stable in a vacuum. (MT)

Cesium Iodide - CsI

The material with the deepest known IR transmission, CsI is sometimes used for components in the widest range spectrophotometers. An extremely soft material it is extremely difficult to polish and so performance is compromised for range. Doped with thallium, CsI(Tl) is a useful scintillator that emits at a wavelength that is a good match for silicon photodiodes. Arrays of this material are used in security imaging systems. Being relatively soft, this material has found application in satellite-borne radiation detectors, which must withstand extreme shock and vibration along with rapid temperature changes. Cesium Iodide precipitated powders are used in solid phase pelletizing of samples for infrared spectroscopy. Advantages offered are: extended transmission range and low water absorption. Laser Use: CsI is used in the far infrared as a beamsplitter or as interferometer plates. Influence of Environment -- Moisture: Cesium Iodide is highly water soluble and polished faces of this material may be damaged by moisture in the atmosphere when the relative humidity is higher than 35%. Handling -- Orientation: Orientation must be done by x-ray techniques. Cleavage: Cesium Iodide does not cleave at room temperature. Cutting and Polishing: Cesium Iodide can be cut with a band saw. Standard polishing techniques can be used. (MT) (H)

Cesium Lithium Borate - CsLiB6O10

Non-linear crystal Cesium Lithium Borate (CsLiB6O10or CLBO) is well suited for UV applications and generates the 4th. and 5th. harmonics of the Nd:YAG fundamental laser wavelength. CLBO is transparent down to 190 nm and can be phase matched for type-II SHG to 640 nm and type-I to 477 nm. CLBO is more readily grown than BBO in that it melts congruently and it can be grown directly from the melt, which eliminates the scatter seen in BBO due to the flux inclusions. CLBO has excellent non-linear optical properties - larger angular and spectral bandwidths than BBO. It also has a lower deffthan BBO, but a smaller walk-off angle and high damage threshold: 26 GW/cm2, twice that of BBO. (33)

Chromium Oxide - Cr2O3

Magnetic material. Hexagonal crystal structure. Melting point 2548K. Max. size: 10 - 15 mm diameter. (12)

Cobalt Oxide - CoO

Magnetic material. Cubic crystal structure. Melting point 2208K. Max. size: 10 - 15 mm diameter. (12)

Cubic Zirconia - ZrO2(YSZ) - (See Zirconium Oxide)

DKDP

DLAP - (See LAP)

Gallium Antimonide - GaSb

GaSb is available in both P and N types for semiconductor industries. Standard wafers are 1.5, 2.0 and 3.0" diameter and oriented [100], [111] and [311] and off angles. GaSb single crystal wafers are grown by the LEC CZ or horizontal zone melting method and prepared for epitaxial deposition.

Gallium Arsenide - GaAs

GaAs is available up to 3" diameter and can be specially doped for use in microwaves, laser and photoelectric devices. Special single crystal substrates are available for depositing III-V compounds for blue lasers and LEDs.
Click here for III-V substrate properties
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Germanium - Ge

Diameters up to 300 mm and transmission range from 1.8 um to 17 um. Grown using CZ method.

GGG

Substrates available for a range of applications including superconductor research.

Indium Antimonide - (Polycrystalline) - InSb

Undoped polycrystals of n-type InSb are manufactured by the horizontal zone melting method. Available in D shapes and wafers 35 + 40 mm, the material is applied in hallotrons and other electronic devices.

Indium Phosphide - InP

Doped and undoped material available in both P and N types up to 3" diameter.

High quality InP single crystal wafers, N and P types, are grown by LEC and precision wafered before epitaxial polishing. Wafers are available doped and undoped in standard sizes of 1.5, 2.0 and 3.0". Semi insulating InP is doped with Fe and are grown by LEC for advanced microwave devices.
Click here for III-V substrate properties
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KDP

KDP (KH2PO4) combines unusually wide transparency, moderate+ nonlinear coupling, high laser damage threshold and good mechanical/chemical properties. KDP is useful with Ti:Sapphire, Nd:YAG and other Q-Switched lasers. DKDP is also available. The most commonly used electro-optical crystal is DKDP with a deuteration more than 98%.

KBO3

Non linear crystals available in 3 x 3 x 6 mm for SHG and THG applications.

KRS-5/KRS-6

KTP

KTP is used as a high frequency doubler. The 1064 nm SUG efficiency is about 80% and has high nonlinear coefficients, high damage threshold and is not hygroscopic. Used as a frequency double in Nd:YAG and as an electro-optical modulator in optical wave guides.

LAP

Lanthanum Aluminate - LaAlO3

Lanthanum Aluminate is widely used as a substrate for depositing superconductor thin films for high frequency and microwave applications. It has a rhombohedral crystal structure with a good lattice match to typical HTSc pervoskite structures and excellent dielectric constant at 25. Lanthanum aluminate wafers are available up to 3" diameter and special rods are produced for microwave cavities.
Click here for superconductor substrate properties

Laser Crystals

  • GGG Doped
    Available 8.00 mm dia. x 800 mm long for high efficiency lasing, polished and coated.
  • Nd:YVO4 - (PDF table of fiber optic crystal properties of this crystal)
    Large grain, a wider Nd absorption peak, lower threshold, and polarized output make Nd:YVO4an excellent crystal for the high power, stable and cost-effective diode laser pumped solid state lasers used in communication, laser printing, laser disk, medicine and many other applications.
  • Nd:YAG
    Available 8.00 mm dia. x 120 mm long for 1079 - 1340 nm CW lasing, polished and coated.
  • Nd:YLF
    Available 3.00 mm dia. x 12 mm long for 1053 nm lasing, polished and coated.
  • Ti:Sapphire - Ti:Al2O3
    High figure of merit, partially or fully Ti doped sapphire laser crystals for tunable lasers. Boules of single crystal metals are available in a variety of materials and alloys in the sizes shown below. Crystals are also available in a range of shapes and sizes cut to any crystallographic orientation using spark erosion machining to minimize strain damage. Wafers and shapes can be polished.

Lead Molybdate - PbMoO4

Available up to 20 x 20 mm polished for modulator and switch application.

Lithium Aluminate - LiAlO2

Special single crystal substrates are available for depositing III-V compounds for blue lasers and LEDs and superconductor thin films.
Click here for III-V substrate properties
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Lithium Fluoride - LiF

Three grades available UV, visible, and infrared transmission. Sizes from 150 to 250 mm diameter.

Lithium Gallate - LiGaO3

Special single crystal substrates are available for depositing III-V compounds for blue lasers and LEDs.

Lithium Iodated - LiIO3

Combines unusually wide transparency, moderate+ nonlinear coupling, high laser damage threshold and good mechanical/chemical properties. BBO is useful with Ti:Sapphire, Nd:YAG and other Q-Switched lasers.

Lithium Niobate - LiNbO3

Crystals have good strength and properties for electro-optical, pyroelectric, and SAW devices. Crystal wafers have exceptional surface finishes and accurately oriented surfaces and edges, cut to standard orientations

Non linear crystals available as wafers or boules 2", 3" and 4" diameter. Applications include SAW devices, SHG and OPO.

Lithium Tantalate - LiTaO3

Crystals have good strength and properties for electro- optical, pyroelectric, and SAW devices. Crystal wafers have exceptional surface finishes and accurately oriented surfaces and edges, cut to standard orientations.

Lithium Tetraborate - Li2B4O7

Lithium Tetraborate....

Lithium Thioindate - LiInS2(LIS)

Lithium Thioindate....

Magnesia Spinel (See Spinel)

Magnesium Fluoride - MgF2

For UV and IR transmission from 0.13 um to 7.0 um and diameters up to 120 mm.

Magnesium Oxide - MgO

MgO is a crystal widely used for deposition of superconductor thin films. It has a cubic structure and a lattice constant of a= 4.203 A. It is also finding application in the deposition III-V thin films. Grown in an electro fusion process, this crystal is available up to 3" diameter and 2 x 2". The standard cleavage orientation is (100), but special cuts are available in smaller sizes (110) and (111).
Click here for III-V substrate properties
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Mercury Cadmium Telluride - HgCdTe (MCT)

Bulk HgCdTe material for IR detectors. Data (pdf 38k)

High quality P and N type epitaxial grown HgCdTe on CdTe or CdZnTe substrates. Available wavelengths of 3 to 20 um and section up to 30 x 30 mm.

Mercury Thiogallate - HgGa2S4

Neodymium Calcium Aluminate - NdCaAlO4

Neodymium Gallate - NdGaO3

Neodymium Gallate is used for depositing HtSC thin films. Standard orientations are (110) and (100). This material is available up to 2" diameter.
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Nickel Aluminide - NiAl

Special single crystal substrates are available for depositing III-V compounds for blue lasers and LEDs.
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Nickel Oxide - NiO

Nickel Oxide...

Potassium Biphthalate - KAP

Potassium Bromide - KBr

Potassium Chloride - KCl

Potassium Gadolinium Tungstate - KGW

Potassium Iodide - KI

Potassium Pentaborate - KB5

Potassium Sodium Strontium Barium Niobate - KNSBN

Potassium Titanyl Phosphate - See KTP

Quartz

Our quartz substrates are seed free in standard 2.25 and 3.00" diameters, cut at all standard orientations with epitaxial polish. Fused or amorphous quartz (fused silica) wafers and windows are also available.

Rubidium Biphthalate - RbAP

Rubidium Chloride - RbCl

Rubidium Titanium Arsenate - RTA (RbTiOPO4)

Rutile (TiO2)

Fiber optic prisms and substrates.

Sapphire (Aluminum Oxide) - Al2O3

Several forms of sapphire are available. Windows, substrates, wafers, flats, spacers and other electro optical components are available up to 8" diameter and can be machined as thin as 0.0005". Precision machined surfaces with tolerances to 0.000050" and flatness to 0.000003". Standard A, C, and R-plane orientations available.

Sapphire is often used as a substrate for depositing electronic, superconducting and III-V thin films.

Comparison of superconductor substrate properties

Comparison of III-V substrate properties.

Sapphire can be directly grown from a melt into tubes, plates, rods, and fibers. Contact us for availability.

Because of its unique properties, sapphire is often machined into precision shapes for instruments and high temperature applications.

Silicon - Si

Growth Method: Czochralski and float zone. Cz ingots and wafers are available up to 150 mm diameter and FZ material up to 76 mm. Both grades are available with a range of dopants and electrical properties. Call or Fax for details of materials. Smooth, regular cross section with slight variation in diameters.
Click here for semiconductor properties.

Silicon Oxide - SiO2 (See quartz)

Silicon Carbide - SiC

Single crystal substrates are available with very low dislocation density. Standard stock sizes are 10 x 10 x 0.3 mm and 7 x 7 x.3mm.
Click here for III-V substrate properties.

Silver Bromide - AgBr

Silver Chloride - AgCl

Silver Gallium Selenide - AgGaSe2

AgGaSe2 is an efficient frequency doubling crystal for infrared radiation. It has low optical absorption, low scattering and low wavefront distortion. AgGaSe2 has the highest figure of merit for nonlinear interactions in the near and deep infrared. Applications for both crystals include differential absorption LIDAR, surgical procedures, and IR wave plates.

Silver Thiogallate - AgGaS2

Sodium Chloride - NaCl

Available up to 120 mm diameter polished for windows and lens.

Sodium Iodide (Tl) - NaI:Tl

Sodium iodide activated by thallium has long been the scintillation standard. NaI:TI has good performance, economical price, high luminescence efficiency, very good spectroscopic performance and no significant self absorption of the scintillation light.
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Spinel - Mg2Al2O4

Our substrates are guaranteed the highest quality and largest sizes available with sizes up to 37 mm diameter. Standard orientations are (111) and (100). For III-V thin film deposition for growing blue lasers and LEDs, our standard size is 10 x 10 x .5 mm and 32 mm diameter with an orientation of (111).
Click here for III-V substrate properties
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Strontium Barium Niobate - SBN

Strontium Lanthanum Aluminate - SrLaAlO4(SLAO)

SrLaAaO4 is a crystal being used for superconductor applications because it has the best lattice match with HtSc pervoskite structures. It has a cubic structure with a lattice constant of 5.451 and has a stable structure without twin defects.
click here for superconductor substrate properties

Strontium Lanthanum Gallate - SrLaGaO4(SLGO)

SrLaGaO4is a crystal being used for superconductor applications.

Strontium Titanate - SrTiO3

Our substrates are guaranteed the highest quality and largest sizes available: Our SuperSurfacesubstrates have a surface finishes with RMS roughness of 3-4 Å and wafering accuracy of 0.5°. Our SuperSize substrates have a maximum sizes of 50 mm diameter.

Standard sizes are normally in stock and custom sizes are available within two weeks. Non standard and off angle orientation along with side orientations are available. The final cleaning and inspection takes place in a class 1000 clean room.
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Synthetic Diamond

Chemical vapor deposited (CVD) diamond is polycrystalline film grown in a metastable state at low pressure. Today's quality of CVD diamond components makes it possible to use them in a wide range of applications such as heat spreaders, high power laser windows, domes for IR imaging in adverse environments, etc. CVD diamond measures up to natural and synthetic diamonds, as it possesses the same great hardness, good wear resistance, excellent thermal conductivity, electric isolation and chemical stability at high pressures and high temperatures. The appeal of CVD diamond is that it can be fabricated into large and affordable components, therefore making high quality diamond available to the industry. The CVD diamond film is known as an ideal "heat sink" material to be used in many types of electronic devices: laser diodes with high current density and high power density, microwave power devices, large scale IC and semiconductor's refrigerator, etc. This material has a much higher thermal conductivity and a lower thermal expansion then that of many of well-known thermal conductors (e.g. copper). This makes CVD diamond film well matched up to most electronic materials. CVD diamond has good prospects in a diverse range of new applications such as laser communication, electronic and computer industries, military weaponry and space technology.
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Tb: Glass

Tb: Glass is used for visible and near IR isolators. It is available 5 mm diameter and 50 mm long.

Tellurium - Te

Tellurium Oxide - TeO2

Available up to 25 x 25 mm polished for modulator and switch application.

Terbium Gallium Garnet - TGG

Thallium Arsenic Selenide - Tl3AsSe

Thallium Halogenide - See KRS-5

Titanium Oxide (Rutile) TiO2

Tryglycine Sulfate

YAG:Ce

Yttrium aluminum garnet activated by cerium is fast, mechanically and chemically resistant scintillator. Mechanical properties enable to produce YAG:Ce scintillation screens down to a thickness of 30 µm.
Click here for properties.

Additional dopants available include: Cr, Nd, Er, CTH, Yb, Tm, and Ho.

YAP:Ce

Yttrium aluminum pervoskite Activated by cerium is fast, mechanically and chemically resistant scintillation material. Mechanical properties enable precise machining and entrance windows can be made with a very thin aluminum layer deposited directly on the entrance surface of the crystal.
Click here for properties.

Additional dopants available include: Ce, Er, Nd, and Tm.

YSGG - Yttrium Scandium Gallium Garnet

Sager, YSSG:Cr, Nd and YSSG:Cr, Er....

Yttrium Aluminate - YAlO3

Yttria aluminate is similar in structure and properties to lanthanum aluminate except it is twin free. It has a low dielectric constant and suitable for microwave or high frequency applications. Available sizes are 10 x 10 and 1.0" diameter.
Click here for superconductor substrate properties.

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Yttrium Vanadate - YVO4for fiber optics

YVO4:Nd - see Laser Crystals

Zinc Germanium Diphosphide - ZnGeP2

Zinc Oxide - ZnO

Zinc Oxide is a material of interest for III-V deposition because of its close match to GaN lattice constant. Available in sizes up to 20 x 20 mm, standard sizes also include 10 x 10 and 5 x 5 mm. Special single crystal substrates are available for depositing III-V compounds for blue lasers and LEDs.
Click here for III-V substrate properties

Zinc Selenide - ZnSe

CVD ZINC SELENIDE is chemically inert, non-hygroscopic, highly pure, theoretically dense and easily machined. It has extremely low bulk losses due to absorption and scatter, has a high resistance to thermal shock and is stable in virtually all environments. It is available in circular blanks and sheet material are available in stock to meet your most urgent delivery requirements. Custom diameters, rectangles, CNC-profiled blanks, generated lens blanks, prisms, and near-net shape domes can also be made to your specifications.
Click here for zinc selenide properties

Zinc Sulfide - ZnS

Seeded vapor phase crystals are grown without contact with reactor walls, up to 40 mm diameter. Substrates for AII-BVIepitaxy and windows for special IR range.

Zinc Telluride - ZnTe

Seeded vapor phase crystals are grown without contact with reactor walls, up to 40 mm diameter. Substrates for AII-BVIepitaxy and windows for special IR range.

Zinc Tungstate - ZnWO4

Zirconium Oxide (YSZ)

Zirconium Oxide is a crystal used for the deposition of superconductor thin films and other applications. It is available up to 4" diameter wafers. Standard sizes also include 3" diameter, 10 x 10 mm, and 0.5" x 0.5".
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