Sapphire > Sapphire Substrates for Blue LEDs
Crystal Structure |
Hexagonal |
Lattice Constant Å |
a - 4,765 c - 13,000 |
Orientation |
C-axis (0001) ± 0.1° |
Diameter: 2" Diameter: 3" |
50.80 ± 0.05mm 76.2 ± 0.05mm |
Thickness: 2" dia Thickness: 3" dia |
330 - 430 ± 50 µm 380 - 480 ± 50 µm |
TTV: 2" dia TTV: 3" dia |
<20 µm <25 µm |
Bow: 2" dia Bow: 3" dia |
<20 µm <25 µm |
Front Surface |
Epi polish |
Backside |
Fine ground or Polished |
Flatness |
<5 microns |
Surface roughness (Ra) |
<0.3nm |
Orientation Flat: 2" dia Orientation Flat: 3" dia |
16mm ± 0.5 mm 22mm ± 0.5 mm |
Primary Flat Location |
A-axis [11-20] ± 0.5° or M-axis [10-10] ± 0.5° |
Secondary Flat |
90° counterclockwise to primary |
Bow |
<2 µm, misoriented substrates, other wafer tolerances available |
Control Methods |
Raw sapphire: inductively coupled argon plasma
Crystal Quality: polarized light, focused light
Orientation: X-ray
Surface quality: AFM & Interferometer. |
* Call for specifications on other sizes.
Additional substrates for III-V nitride film deposition
Substrates for Superconductor Thin Films
Sapphire Table of General Properties
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