ADP combines a wide range of transmission wave lengths and a high nonlinear optical coefficient as well as a high optical damage threshold. ADP crystal is a commonly used material to make 4th harmonic wave generators for 1.6 micron lasing and frequency multiplier for dye lasers. It has good piezoelectric and electro optical properties. Available sizes from 20 x 20 x 20 to 70 x 70 x 70 mm.

Barium Fluoride is grown by vacuum Stockbarger technique in diameters up to 240 mm. Available in both optical and scintillator grades. Diameters up to 240 mm for transmission to 12.5 um.

BaTiO3 is a crystal used for its photorefractive properties and large electro-optic coefficients. For optical information processing and computing applications, the high beam coupling gain and self pumped phase conjugate reflectivity are advantageous. BaTiO3 is also known for low absorption loss in visible and near infrared range, high resolution and fidelity of phase conjugate.

BBO is a new type of non-linear optical crystal which exhibits a wide transparency range (190-350 nm), high nonlinear coefficient (6 x deff KDP at 1064-532 nm), and high damage threshold. BBO is useful with Ti:Sapphire, Nd:YAG and other Q-Switched lasers.

BGO is a novel scintillation crystal, widely used as a scintillator for x-ray computerized tomography (XCT), positron CT (PCT), electromagnetic shower calorimeter and oil well logging. BGO features high stopping power and high photo peak efficiency, is non-hygroscopic, has low after glow, and is easy to machine to any size required. Boules up to 76 mm dia. 150 mm long.

Thermal electric materials based on BiTe are available in both N and P types for use in thermoelectric coolers. This material can be adjusted to meet particular specifications. Typical Seebeck coefficients are 200 - 260, electrical conductivity of 500 - 1000/Ohm-cm and a guaranteed Z factor of .0029/K°. For increased strength, BiTe is also available as polycrystalline material. Wafers can be cut to size and coated with nickel for added strength.

BSO has properties of piezoelectric, photoconductive, electro-optic crystals. Applications include image amplifiers, matrix inversion, beam combining, to mention a few. BSO is available for modulator applications, 50 mm diameter and 100 mm long.

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Seeded vapor phase crystals are grown without contact with reactor walls, up to 2" diameter. Substrates for AII-BVI epitaxy, polarisators and windows for special IR range.
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Seeded vapor phase crystals are grown without contact with reactor walls, up to 2" diameter. Substrates for AII-BVI epitaxy, polarisators and windows for special IR range.

CdTe and mixed crystals up to 3" diameter for growing epitaxial layers of MCT for IR detectors, special windows, and solar cells. Grown using Bridgeman with Cd-reservoir.

CdZnTe and mixed crystals up to 3" diameter for growing epitaxial layers of MCT for IR detectors, special windows, and solar cells.

Calcite is a double refracting mineral used to produce polarized prisms. CaCO2 is available up to 50 x 50 mm with standard orientations and coatings.

Calcium Fluoride is grown by vacuum Stockbarger technique in diameters up to 350 mm. Widely used in IR applications such s spectroscopic accessories, prisms and lenses. CaF has a cubic structure with a lattice constant of 5.462 A and a cleavage plane of [111]. The transmission range is 0.13 to 10 microns. Three grades available UV, visible, and infrared transmission. Sizes from 150 to 350 mm diameter.

CaNdAlO3 is a newly available crystal for superconductor and other applications that has a cubic structure and a lattice constant of 5.653 A and thermal expansion of 6.0 x -10. It is a stable pervoskite structure without twinning, has low dielectric constant suitable for microwave or high frequency applications. Call for available sizes.
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GaSb is available in both P and N types for semiconductor industries. Standard wafers are 1.5, 2.0 and 3.0" diameter and oriented [100], [111] and [311] and off angles. GaSb single crystal wafers are grown by the LEC CZ or horizontal zone melting method and prepared for epitaxial deposition.

GaAs is available up to 3" diameter and can be specially doped for use in microwaves, laser and photoelectric devices. Special single crystal substrates are available for depositing III-V compounds for blue lasers and LEDs.
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GaP single crystals are produced using high pressure LEC CZ method are available in both P and N types, doped with S or Te. Wafers are precision cut along standard [111] and [100] axis for red, orange, yellow, and green LED and for substrates for nitride films to produce depositing III-V compounds for blue lasers and LEDs. Standard sizes include 45 mm dia and can be supplied up to 51 mm.
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Diameters up to 300 mm and transmission range from 1.8 um to 17 um. Grown using CZ method.

Substrates available for a range of applications including superconductor research.

Doped and undoped material available in both P and N types up to 3" diameter.

High quality InP single crystal wafers, N and P types, are grown by LEC and precision wafered before epitaxial polishing. Wafers are available doped and undoped in standard sizes of 1.5, 2.0 and 3.0". Semi insulating InP are doped with Fe are grown by LEC for advanced microwave devices.
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Non linear crystals available in 15 x 15 x 15 mm for SHG and (UV) window applications because of its wide transmission range 0.2 - 60 microns.

KDP combines unusually wide transparency, moderate+ nonlinear coupling, high laser damage threshold and good mechanical/chemical properties. BBO is useful with Ti:Sapphire, Nd:YAG and other Q-Switched lasers.

Non linear crystals available in 3 x 3 x 6 mm for SHG and THG applications.

KTP is used as a high frequency doubler. The 1064 nm SUG efficiency is about 80% and has high nonlinear coefficients, high damage threshold and non hygroscopicity. Used as a frequency double in Nd:YAG and as an electro-optical modulator in optical wave guides.

Lanthanum Aluminate is widely used as a substrate for depositing superconductor thin films for high frequency and microwave applications. It has a rhombohedral crystal structure with a good lattice match to typical HTSc pervoskite structures and excellent dielectric constant at 25. Lanthanum aluminate wafers are available up to 3" diameter and special rods are produced for microwave cavities.
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Thorium doped lanthanum aluminate is a new crystal doped with 2% Th. Doping provides a colorless, domain free substrate with a lower dielectric constant for microwave applications. The Th +4 dopant plays the same role as the O2 to compensate for the electron deficiencies in the La state found in pure LaAlO3. This suppresses the color center and changes the domain pattern from large random domain walls to ultra find domain walls that are parallel to the (100) plane. These walls can be removed at room temperature by compressing perpendicular to the domain wall.
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Lithium Borate - LiBO3

LBO combines unusually wide transparency, moderate+ nonlinear coupling, high laser damage threshold and good mechanical/chemical properties. BBO is useful with Ti:Sapphire, Nd:YAG and other Q-Switched lasers.

Available up to 20 x 20 mm polished for modulator and switch application.

Special single crystal substrates are available for depositing III-V compounds for blue lasers and LEDs and superconductor thin films.
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Three grades available UV, visible, and infrared transmission. Sizes from 150 to 250 mm diameter.

Special single crystal substrates are available for depositing III-V compounds for blue lasers and LEDs.

Combines unusually wide transparency, moderate+ nonlinear coupling, high laser damage threshold and good mechanical/chemical properties. BBO is useful with Ti:Sapphire, Nd:YAG and other Q-Switched lasers.

Crystals have good strength and properties for electro- optical, pyroelectric, and SAW devices. Crystal wafers have exceptional surface finishes and accurately oriented surfaces and edges, cut to standard orientations.

Non linear crystals available as wafers or boules 2", 3" and 4" diameter. Applications include SAW devices, SHG and OPO.

Crystals have good strength and properties for electro- optical, pyroelectric, and SAW devices. Crystal wafers have exceptional surface finishes and accurately oriented surfaces and edges, cut to standard orientations.

For UV and IR transmission from 0.13 um to 7.0 um and diameters up to 120 mm.

MgO is a crystal widely used for deposition of superconductor thin films. It has a cubic structure and a lattice constant of a= 4.203 A. It is also finding application in the deposition III-V thin films. Grown in an electro fusion process, this crystal is available up to 3" diameter and 2 x 2". The standard cleavage orientation is (100), but special cuts are available in smaller sizes (110) and (111).
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Bulk HgCdTe material for IR detectors

High quality P and N type epitaxial grown HgCdTe on CdTe or CdZnTe substrates. Available wavelengths of 3 to 20 um and section up to 30 x 30 mm.

Sodium iodide activated by thallium has long been the scintillation standard. NaI:TI has good performance, economical price, high luminescence efficiency, very good spectroscopic performance and no significant self absorption of the scintillation light.
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Neodymium Gallate is used for depositing HtSC thin films. Standard orientations are (110) and (100). This material is available up to 2" diameter.
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Special single crystal substrates are available for depositing III-V compounds for blue lasers and LEDs.
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Grown by flux method, call for sizes.

Our quartz substrates are seed free in standard 2.25 and 3.00" diameters, cut at all standard orientations with epitaxial polish.

Sapphire is available in a number of forms for numerous applications. Windows, substrates, wafers, flats, spacers and other electro optical components are available up to 8" diameter and can be machined as thin as .0005". Precision machined surfaces with tolerances to .000050" and flatness to .000003". Standard R, M, C, and R-plane orientations available.

It is often used as a substrate for depositing electronic, superconducting and III-V thin films.
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Sapphire can be directly grown from a melt into tubes, plates, rods, and fibers. Contact us for availability.

Because of its unique properties, sapphire is often machined into precision shapes for instruments and high temperature applications.

Growth Method: Czochralski and float zone
Cz ingots and wafers are available up to 150 mm diameter and FZ material up to 76 mm. Both grades are available with a range of dopants and electrical properties. Call or Fax for details of materials. Smooth, regular cross section with slight variation in diameters.
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Single crystal substrates are available with very low dislocation density. Standard stock sizes are 10 x 10 x 0.3 mm and 7 x 7 x.3mm.
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AgGaSe2 is an efficient frequency doubling crystal for infrared radiation. It has low optical absorption, low scattering and low wavefront distortion. AgGaSe2 has the highest figure of merit for nonlinear interactions in the near and deep infrared. Applications for both crystals include differential absorption LIDAR, surgical procedures, and IR wave plates.

Available up to 120 mm diameter polished for windows and lens.

Our substrates are guaranteed the highest quality and largest sizes available with sizes up to 37 mm diameter. Standard orientations are (111) and (100). For III-V thin film deposition for growing blue lasers and LEDs, our standard size is 10 x 10 x .5 mm and 32 mm diameter with an orientation of (111).
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SrLaGaO3 is a crystal being used for superconductor applications.

SrLaAaO3 is a crystal being used for superconductor applications because it has the best lattice match with HtSc pervoskite structures. It has a cubic structure with a lattice constant of 5.451 and has a stable structure without twin defects.
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Our substrates are guaranteed the highest quality and largest sizes available: Our SuperSurface substrates have a surface finishes with RMS roughness of 3-4 Å and wafering accuracy of 0.5°. Our SuperSize substrates have a maximum sizes of 50 mm diameter.

Standard sizes are normally in stock and custom sizes are available within two weeks. Non standard and off angle orientation along with side orientations are available. The final cleaning and inspection takes place in a class 1000 clean room.
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Tb: Glass is used for visible and near IR isolators. It is available 5 mm diameter and 50 mm long.

Available up to 25 x 25 mm polished for modulator and switch application.

Available in a number of sizes and prism shapes.

Yttrium aluminum garnet activated by cerium is fast, mechanically and chemically resistant scintillator. Mechanical properties enable to produce YAG:Ce scintillation screens down to a thickness of 30 �m.
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Yttrium aluminum perovkite Activated by cerium is fast, mechanically and chemically resistant scintillation material. Mechanical properties enable precise machining and entrance windows can be made with a very thin aluminum layer deposited directly on the entrance surface of the crystal.
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Yttria aluminate is similar in structure and properties to lanthanum aluminate except it is twin free. It has a low dielectric constant and suitable for microwave or high frequency applications. Available sizes are 10 x 10 and 1.0" diameter.
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Single crystal YBCO is available in wafer form up to 5 x 5mm square.

Zinc Oxide is a material of interest for III-V deposition because of its close match to GaN lattice constant. Available in sizes up to 20 x 20 mm, standard sizes also include 10 x 10 and 5 x 5 mm. Special single crystal substrates are available for depositing III-V compounds for blue lasers and LEDs.
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Seeded vapor phase crystals are grown without contact with reactor walls, up to 40 mm diameter. Substrates for AII-BVI epitaxy and windows for special IR range.

Seeded vapor phase crystals are grown without contact with reactor walls, up to 40 mm diameter. Substrates for AII-BVI epitaxy and windows for special IR range.

Seeded vapor phase crystals are grown without contact with reactor walls, up to 40 mm diameter. Substrates for AII-BVI epitaxy and windows for special IR range.

Zirconium Oxide is a crystal used for the deposition of superconductor thin films and other applications. It is available up to 4" diameter wafers. Standard sizes also include 3" diameter, 10 x 10 mm, and 0.5" x O.5".
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